Solution LAB3 hBN: Difference between revisions
Jump to navigation
Jump to search
No edit summary |
No edit summary |
||
| (7 intermediate revisions by 2 users not shown) | |||
| Line 1: | Line 1: | ||
* Back to the previous page: [[Electronic properties of 2D and 1D systems#Exercise 2: hBN]] | * Back to the previous page: [[Electronic properties of 2D and 1D systems#Exercise 2: Hexagonal Boron Nitrite (hBN) ]] | ||
Now we do have two non-equivalent atoms | Now we do have two non-equivalent atoms | ||
*If you do not have already done, git pull the LabQSM repository to get the Boron pseudo-potential | *If you do not have already done, git pull the LabQSM repository to get the Boron pseudo-potential | ||
*Use the same input used for graphene | *Use the same input used for graphene inserting the two non-equivalent atoms | ||
*Relax the cell as done before (at the LDA level, a = 4.654 Bohr) | |||
*For the bulk structure the c/a cell parameter is 2.582 (including 2 hBN layers) | |||
Latest revision as of 16:11, 15 March 2022
- Back to the previous page: Electronic properties of 2D and 1D systems#Exercise 2: Hexagonal Boron Nitrite (hBN)
Now we do have two non-equivalent atoms
- If you do not have already done, git pull the LabQSM repository to get the Boron pseudo-potential
- Use the same input used for graphene inserting the two non-equivalent atoms
- Relax the cell as done before (at the LDA level, a = 4.654 Bohr)
- For the bulk structure the c/a cell parameter is 2.582 (including 2 hBN layers)